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Quasistatic C-V Meter

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The quasistatic C-V meter measures the quasistatic capacitance of metal-insulator-semiconductor circuit elements (MIS) as a function of applied voltage (C-V). It uses the load-voltage (Q-V) technique during measurement.

Instrument: Keithley 595

This device also has the ability to make current-voltage (I-V) measurements.

Specifications

  • Capacitance measuring range (10fF-20nF) and current range (1fA - 20µA)
  • ±20V voltage source (0.01V tolerance).

Applications

Quasistatic C-V measurements are used to characterize MIS circuit elements. Combined with high frequency C-V measurements, it enables the detection of interface trap states in MIS diodes.

R&D Training and Measurement Center

Electrical, Magnetic and Optical Properties Measurement Laboratory(EMOL)

Atomic Force Microscope
Barkhausen-Noise Analysis System
Color Spectrophotometer
Digital Multimeters
Electrical and Magnetic Properties Measurement System
Impedance Analyzer
Nanovolt, Micro-Ohm Meter
Oscilloscope
Quasistatic C-V Meter
Refractometer
Semiconductor Characterization Device


Laboratories

R&D Training and Measurement Center

Electrical, Magnetic and Optical Properties Measurement Laboratory(EMOL)

Atomic Force Microscope
Barkhausen-Noise Analysis System
Color Spectrophotometer
Digital Multimeters
Electrical and Magnetic Properties Measurement System
Impedance Analyzer
Nanovolt, Micro-Ohm Meter
Oscilloscope
Quasistatic C-V Meter
Refractometer
Semiconductor Characterization Device


Laboratories

Share
Tweet
  • English
  • Türkçe
Listen

The quasistatic C-V meter measures the quasistatic capacitance of metal-insulator-semiconductor circuit elements (MIS) as a function of applied voltage (C-V). It uses the load-voltage (Q-V) technique during measurement.

Instrument: Keithley 595

This device also has the ability to make current-voltage (I-V) measurements.

Specifications

  • Capacitance measuring range (10fF-20nF) and current range (1fA - 20µA)
  • ±20V voltage source (0.01V tolerance).

Applications

Quasistatic C-V measurements are used to characterize MIS circuit elements. Combined with high frequency C-V measurements, it enables the detection of interface trap states in MIS diodes.

Merkezi Laboratuvar ARGE Eğitim Ölçme Merkezi Üniversiteler Mahallesi, Dumlupınar Bulvarı No:1, 06800 Çankaya/Ankara © ORTA DOĞU TEKNİK ÜNİVERSİTESİ ANKARA KAMPUSU